Advanced simulations and analysis of emerging unconventional nano-MOSFET structure based on silicon material.
Design, modelling and simulations of strained silicon based devices for conventional and emerging nano-MOSFET structure.
Compact physics-based modelling of nano-MOSFET such as ballistic transport, nanowire, carbon nanotube, graphene, nanoscroll, nanobelt, superlattice strained, double-gate and surrounding-gate nanoscale transistor.
Development of silicon and carbon based materials particularly Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), Carbon Nanotube Field-Effect Transistor (CNTFET) and Graphene Nanoribbon Field-Effect Transistor (GNRFET) device.
Circuit level modeling based on silicon and carbon based material for standard electronic computer-aided design (ECAD) tools to enable digital logic circuit design. MATLAB, Synopsys HSPICE and Orcad PSPICE are used to simulate the robust and comprehensive device, circuit and layout-based models.
Analog CMOS circuit design, biomolecular sensing, DNA chip.
The development of deep submicron Single Photon Avalanche Diode (SPAD) as an imaging sensor.
Graphene based sensors.
Zinc Oxide nanowire and thin film fabrication for sensor devices.
Nanocrystalline graphite device for sensor applications.